Improved ambient operation of n-channel organic transistors of solution-sheared naphthalene diimide under bias stress.
نویسندگان
چکیده
Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm(2) V(-1) s(-1). Under bias stress an increase in effective charge carrier mobility of up to 4.26 cm(2) V(-1) s(-1) has been observed.
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ورودعنوان ژورنال:
- Physical chemistry chemical physics : PCCP
دوره 14 41 شماره
صفحات -
تاریخ انتشار 2012